unisonic technologies co., ltd 2sa928a pnp silicon transistor www.unisonic.com.tw 1 of 4 copyright ? 2010 unisonic technologies co., ltd qw-r211-009.d audio power amplifier ? features * collector dissipation p c =1 w * 3 w output application * complement of 2sc2328a ? ordering information ordering number pin assignment normal lead free halogen free package 1 2 3 packing 2SA928A-X-T92-B 2sa928al-x-t92-b 2sa928ag-x-t92-b to-92 e c b tape box 2sa928a-x-t92-k 2sa928al-x-t92-k 2sa928ag-x-t92-k to-92 e c b bulk 2sa928a-x-t9n-b 2sa928al-x-t9n-b 2sa928ag-x-t9n-b to-92nl e c b tape box 2sa928a-x-t9n-k 2sa928al-x-t9n-k 2 sa928ag-x-t9n-k to-92nl e c b bulk
2sa928a pnp silicon transistor unisonic technologies co., ltd 2 of 4 www.unisonic.com.tw qw-r211-009.d ? absolute maximum ratings (ta=25 c, unless otherwise specified) parameter symbol ratings unit collector- base voltage v cbo -30 v collector-emitter voltage v ceo -30 v emitter-base voltage v ebo -5 v collector current i c -2 a collector dissipation p c 1 w junction temperature t j +150 c storage temperature t stg -55 ~ +150 c note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? electrical characteristics (ta=25 c, unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage bv cbo i c =-100 a, i e =0 -30 v collector-emitter breakdown voltage bv ceo i c =-1ma, i b =0 -30 v emitter-base breakdown voltage bv ebo i e =-1ma, i c =0 -5 v collect cut-off current i cbo v cb =-30v, i e =0 -100 na emitter cut-off current i ebo v be =-5v, i c =0 -100 na dc current ratio h fe v ce =-2v, i c =-500ma 100 320 base-emitter on voltage v be(on) v ce =-2v, i c =-500ma -1 v collector-emitter satu ration voltage v ce(sat) i c =-1.5a, i b =-30ma -2 v output capacitance c ob v cb =-10v, i e =0, f =1mhz 48 pf current gain bandwidth product f t v ce =-2v, i c =-500ma 120 mh z ? classification of h fe rank q y range 100 ~ 200 160 ~ 320
2sa928a pnp silicon transistor unisonic technologies co., ltd 3 of 4 www.unisonic.com.tw qw-r211-009.d ? typical characteristics i b =-7ma i b =-6ma i b =-5ma i b =-4ma i b =-3ma i b =-2ma i b =-1ma 0 -2 -4 -6 -8 -10 -12 -14 -16 0 -200 -400 -600 -800 -1000 -1200 -1400 static characteristic collector current, i c (ma) collector-emitter voltage, v cb (v) base-emitter on voltage v ce =-2v 0 -200 -400 -600 -800 -1000 -1200 -1400 collector current, i c (ma) 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 base-emitter voltage, v be (v) dc current gain,h fe collector-emitter saturation voltage, v ce(sat) (v) power derating 1.2 1.4 power dissipation, p d (w) 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 160 ambient temperature, ta (c) i c(max) pulse i c(max) 1s ta=25c d.c. operation 1ms v ceo(max) -0.01 -0.03 -0.05 -0.1 -0.3 -0.5 -1 -3 -5 -0.1 -0.3 -0.5 -1 -3 -5 -10 -30-50 -100 collector emitter voltage, v cb (v) collector curremt, i d (ma) safe operating area
2sa928a pnp silicon transistor unisonic technologies co., ltd 4 of 4 www.unisonic.com.tw qw-r211-009.d utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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